Title of article
Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm
Author/Authors
Chang، نويسنده , , S.J. and Yu، نويسنده , , H.C. and Su، نويسنده , , Y.K. and Chen، نويسنده , , I.L. and Lee، نويسنده , , T.D. and Lu، نويسنده , , C.M. and Chiou، نويسنده , , C.H. and Lee، نويسنده , , Z.H. and Yang، نويسنده , , H.P. and Sung، نويسنده , , C.P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
60
To page
63
Abstract
Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance.
Keywords
Oxide mode , VCSEL , InGaAs , Highly strain
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2142788
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