Title of article :
New materials and device architectures for the end-of-roadmap CMOS nodes
Author/Authors :
Skotnicki، نويسنده , , Thomas and Boeuf، نويسنده , , Frederic and Cerutti، نويسنده , , Robin and Monfray، نويسنده , , Stephane and Fenouillet-Beranger، نويسنده , , Claire and Muller، نويسنده , , Markus and Pouydebasque، نويسنده , , Arnaud، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
3
To page :
7
Abstract :
Conventional bulk CMOS scaling starts to fail. In order to prolong the life of Mooreʹs laws, at least one technological booster (innovation) per node has to be introduced starting from the node 32 nm on. This presents a big technological challenge for the semiconductor industry. On the other hand, accumulation of the boosters permits to retrieve healthy scaling down to sub-10 nm gate lengths. This strategy even if technologically very challenging, is prospected to prolong the CMOS competitiveness till at least 2020.
Keywords :
CMOS competitiveness , Devices , Semiconductor
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2005
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2143159
Link To Document :
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