• Title of article

    New materials and device architectures for the end-of-roadmap CMOS nodes

  • Author/Authors

    Skotnicki، نويسنده , , Thomas and Boeuf، نويسنده , , Frederic and Cerutti، نويسنده , , Robin and Monfray، نويسنده , , Stephane and Fenouillet-Beranger، نويسنده , , Claire and Muller، نويسنده , , Markus and Pouydebasque، نويسنده , , Arnaud، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    5
  • From page
    3
  • To page
    7
  • Abstract
    Conventional bulk CMOS scaling starts to fail. In order to prolong the life of Mooreʹs laws, at least one technological booster (innovation) per node has to be introduced starting from the node 32 nm on. This presents a big technological challenge for the semiconductor industry. On the other hand, accumulation of the boosters permits to retrieve healthy scaling down to sub-10 nm gate lengths. This strategy even if technologically very challenging, is prospected to prolong the CMOS competitiveness till at least 2020.
  • Keywords
    CMOS competitiveness , Devices , Semiconductor
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2005
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2143159