Scanning spreading resistance microscopy (SSRM) 2d carrier profiling for ultra-shallow junction characterization in deep-submicron technologies

This work presents the recent progress in SSRM capabilities highlighting simultaneous performances in terms of sensitivity (<10%), spatial resolution (1–3 nm), dopant gradient resolution (1–2 nm/decade) and quantification accuracy (20–30%). The latter is illustrated through the analysis of different carrier profiling applications, i.e. the calibration of process simulations for a 90 nm n-MOS technology, the determination of the impact of nitridation on the lateral diffusion in a 40 nm n-MOS technology, the study of activation and diffusion problems in SPER-anneals of shallow implants, the observation of stress-induced diffusion mechanisms in the vicinity of shallow trench isolations (STI) and the study of diffusion and mobility mechanisms in SiGe MOS structures. Favorable comparisons with SCM and STM are also presented and do illustrate the unique capability of the SSRM technique.