Title of article
Raman spectroscopy of Si1−xGex epilayers
Author/Authors
Pezzoli، نويسنده , , Frank F. and Martinelli، نويسنده , , Lucio and Grilli، نويسنده , , E. and Guzzi، نويسنده , , M. and Sanguinetti، نويسنده , , S. and Bollani، نويسنده , , M. and Chrastina، نويسنده , , H.D. and Isella، نويسنده , , G. and Kنnel، نويسنده , , H. von and Wintersberger، نويسنده , , E. and Stangl، نويسنده , , J. and Bauer، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
127
To page
131
Abstract
The first systematic investigation of the vibrational properties of epitaxial Si1−xGex alloys in the entire composition range (0 ≤ x ≤ 1) is presented. Reciprocal Space Mapping measurements and a Raman spectroscopy study have been undertaken on alloys grown by Low Energy Plasma Enhanced Chemical Vapour Deposition (LEPECVD) in order to investigate the phonon mode frequency dependence on structural and elastic parameters. It is concluded that the strain relaxation process in the LEPECVD virtual substrates is very effective in the entire composition range and that in these fully relaxed epitaxial SiGe alloys the presence of ordering effects and of local composition fluctuations can be excluded.
Keywords
Raman spectroscopy , Si1?xGex epilayers , Vibrational properties
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2143229
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