Substrate influence on the outdiffusion of antimony dopant in monocrystalline silicon

In this work, we study the effect of silicon substrate orientation on the outdiffusion of antimony dopant. The monocrystalline Si(1 0 0) and Si(1 1 1) substrates were implanted with Sb+ ions at an energy of 60 keV, to a dose of 5 × 1015 Sb+ cm−2. The recovery of radiation damage was performed with a conventional annealing treatment at 1173 K (900 °C). The analysis was carried out by means of high-resolution RBS (Rutherford backscattering spectrometry) technique using protons of 0.3 MeV energy. shown that Sb+ ions were rejected to the surface, for both Si(1 0 0) and Si(1 1 1) samples. Moreover, it was noticed that an important quantity of antimony was lost especially for the case of Si(1 1 1) specimens. Finally, we note that several ion implantation parameters (Rp, ΔRp, dose, radiation damage) were evaluated with a good accuracy.