Author/Authors :
Boucard، نويسنده , , F. and Roger، نويسنده , , F. and Chakarov، نويسنده , , I. and Zhuk، نويسنده , , V. and Temkin، نويسنده , , M. and Montagner، نويسنده , , X. and Guichard، نويسنده , , E. and Mathiot، نويسنده , , D.، نويسنده ,
Abstract :
This paper presents a global approach permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) are integrated within a unique simulation tool. A useful set of the relevant parameters has been obtained through an original calibration methodology. It is shown that this approach provides an efficient tool for process modelling.
Keywords :
diffusion , process modeling , dopant , Silicon , TCAD , Implantation
