• Title of article

    An investigation on the modeling of boron-enhanced diffusion of ultralow energy implanted boron in silicon

  • Author/Authors

    Marcon، نويسنده , , J. and Ihaddadene-Le Coq، نويسنده , , L. and Masmoudi، نويسنده , , K. and Ketata، نويسنده , , K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    4
  • From page
    415
  • To page
    418
  • Abstract
    We have simulated the boron-enhanced diffusion (BED) of boron implanted in silicon. We have used published data for B implantation with an energy of 500 eV in crystalline silicon. The simulation well reproduces the experimental profiles when sinks for interstitials are considered. Sources and sinks of self-interstitials are discussed as function of temperature.
  • Keywords
    SIMULATION , Boron-enhanced diffusion , Transient enhanced diffusion , boron
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2005
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2143379

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2143379