Author/Authors :
Chow، نويسنده , , C.F. and Wong، نويسنده , , S.P. and Gao، نويسنده , , Y. and Ke، نويسنده , , N. and Li، نويسنده , , Q. and Cheung، نويسنده , , W.Y. and Lourenco، نويسنده , , M.A. and Homewood، نويسنده , , K.P.، نويسنده ,
Abstract :
Silicon MOS structures with FeSi2 precipitates embedded in the MOS active region have been fabricated and the electroluminescence (EL) properties from these FeSi2–Si MOS structures were measured as a function of temperature from 80 K to 300 K. Clear EL signals were observed even at room temperature for samples prepared at appropriate processing conditions. The EL spectra consist of two peaks, one attributed to FeSi2 and the other attributed to Si band edge emission. While the intensity of the FeSi2 peak showed the usual thermal quenching behavior, the Si band edge emission showed the opposite trend with its intensity increased with increasing temperature. Details of the line shapes and their temperature dependence are analyzed and discussed.
