The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in Si

Nanometer-sized β-FeSi2 precipitates are formed in Si by ion beam synthesis (IBS). A systematic study is carried out to investigate the correlation among the implantation parameters, the microstructure, and the luminescence properties. On the one hand, we found additional orientation relationships (ORs) appear between the β-FeSi2 and the Si with improved lattice coherence between the two, when the ion implantation energy is increased. On the other hand, the degree of preferential orientation deteriorates and leads to poor lattice coherence between the particles and Si matrix when the iron ion is overdosed. These microstructure changes lead to different luminescence properties (intensity, peak position and shape) of the β-FeSi2 particles accordingly.