Author/Authors :
Malissa، نويسنده , , H. and Jantsch، نويسنده , , W. and Chen، نويسنده , , G. and Gruber، نويسنده , , D. and Lichtenberger، نويسنده , , H. and Schنffler، نويسنده , , F. and Wilamowski، نويسنده , , Z. and Tyryshkin، نويسنده , , A. and Lyon، نويسنده , , S.، نويسنده ,
Abstract :
We present an investigation of the g-factor and the spin coherence time of electrons confined in regular SiGe quantum dot arrays deposited on prepatterned Si substrates. These structures were investigated by photoluminescence and electron paramagnetic resonance both in continuous wave and pulsed mode.
t structures consist of regular arrays of about 1 0 10 SiGe quantum dots on a Si(1 0 0) substrate that was prepatterned by e-beam lithography or holographic lithography. These quantum dot systems show an EPR line with a g-factor of conduction electrons in Si. The spin lifetime fits to that of two-dimensional SiGe structures, but the EPR line width shows inhomogeneous broadening. A 2D anisotropy is no longer visible.
