Title of article
Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy
Author/Authors
Palumbo، نويسنده , , O. and Cantelli، نويسنده , , Selim R. and Cordero-Reyes، نويسنده , , F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
114
To page
117
Abstract
We review some results obtained by anelastic spectroscopy on H-related defects in III–V semiconductors. Anelastic measurements on InP lead to the formulation of a model explaining the conversion to the semi-insulating (SI) state. Moreover, in GaAs:Zn an extraordinarily fast relaxation rate has been measured and a possible explanation has been suggested. This results are reviewed and discussed in the light of new experiments on InP:Zn, whose spectrum shows a relaxation process similar to the one in GaAs:Zn.
Keywords
Gallium arsenide , Indium phosphide , Hydrogen , Point defect complexes
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
2004
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2143582
Link To Document