• Title of article

    Hydrogen and deuterium tunnelling in scandium

  • Author/Authors

    Trequattrini، نويسنده , , F. and Cordero، نويسنده , , F. and Cannelli، نويسنده , , G. and Cantelli، نويسنده , , R.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    5
  • From page
    118
  • To page
    122
  • Abstract
    A detailed study of the relaxation processes occurring below room temperature has been carried out by charging polycrystalline Sc with different amount of hydrogen and deuterium. For all the concentrations, we have observed relaxation effects ascribed to tunnelling of H (D) between the two equivalent first neighbour tetrahedral sites in the c direction, which strongly depend on the H (D) content. In diluted Sc–H (up to few hundreds ppm H), due to the presence of interstitial O, the main anelastic peak is related to the tunnelling of H trapped by O. Increasing the H (D) concentration the traps are saturated and new peaks appear at lower temperature. A marked isotope effect is observed; the peaks shift in temperature and are at least four times smaller with H than with D, when measured at the same frequency. In deuterated sample the main peak has been analysed in terms of the two-level-systems (TLS). A good fit for the case of 1 at.% D could be obtained with a relaxation time τ∝T−7 and a small distribution of the asymmetries. This indicates that, quite surprisingly, the rate in this temperature range is dominated by multiple phonons processes.
  • Keywords
    Atomic tunnelling , isotope effect
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Serial Year
    2004
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Record number

    2143583