Title of article
Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications
Author/Authors
Lin، نويسنده , , Chun-Yu and Fang، نويسنده , , Yean-Kuen and Chen، نويسنده , , Shih-Fang and Lin، نويسنده , , Ping-Chang and Lin، نويسنده , , Chun-Sheng and Chou، نويسنده , , Tse-Heng and Hwang، نويسنده , , Jenn Shyong and Lin، نويسنده , , Kuang I.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
251
To page
254
Abstract
High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm.
Keywords
Nanocrystalline silicon (nc-Si) , Photo-detecting , Hall mobility , Absorption coefficient , Micro-Raman scattering
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2006
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2143817
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