Title of article
Growth, real structure and applications of GaSe1−xSx crystals
Author/Authors
Andreev، نويسنده , , Yu.M. and Atuchin، نويسنده , , V.V. and Lanskii، نويسنده , , G.V. and Morozov، نويسنده , , A.N. and Pokrovsky، نويسنده , , L.D. and Sarkisov، نويسنده , , S.Yu. and Voevodina، نويسنده , , O.V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
6
From page
205
To page
210
Abstract
Real defect structure, growing technology and physical properties of doped GaSe:S crystals are presented. From comparative experiment on CO2 laser SHG at identical experimental conditions 1.45 times advantages of GaSe:S (2 wt%) in relation to pure and GaSe:In (0.1 wt%) crystals are developed.
Keywords
Crystal growth , GaSe , Doping , defect structure , Cleaving
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2006
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2143936
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