Title of article :
Growth, real structure and applications of GaSe1−xSx crystals
Author/Authors :
Andreev، نويسنده , , Yu.M. and Atuchin، نويسنده , , V.V. and Lanskii، نويسنده , , G.V. and Morozov، نويسنده , , A.N. and Pokrovsky، نويسنده , , L.D. and Sarkisov، نويسنده , , S.Yu. and Voevodina، نويسنده , , O.V.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
Real defect structure, growing technology and physical properties of doped GaSe:S crystals are presented. From comparative experiment on CO2 laser SHG at identical experimental conditions 1.45 times advantages of GaSe:S (2 wt%) in relation to pure and GaSe:In (0.1 wt%) crystals are developed.
Keywords :
Crystal growth , GaSe , Doping , defect structure , Cleaving
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
