Title of article :
Study of electrical transport and magnetic properties in CaMn1−xCuxO3
Author/Authors :
Kar، نويسنده , , Manoranjan and Borah، نويسنده , , S.M. and Ravi، نويسنده , , S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
54
To page :
58
Abstract :
Copper doped, CaMn1−xCuxO3 compounds have been prepared in single phase form for x = 0–0.20. XRD patterns could be analyzed using Pbnm space group with typical lattice parameters a = 5.276 Å, b = 5.259 Å and c = 7.459 Å. All samples exhibit antiferromagnetic transitions with Neel temperatures around 124 K. The temperature variations of electrical resistivity follow the semi-conducting behaviour and they could be analyzed using variable range hopping with Coulomb interaction (ES-VRH) model. The Cu doping is found to enhance the antiferromagnetic interactions.
Keywords :
Manganese , exchange interactions , electrical measurements , oxides , Copper
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2006
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2143992
Link To Document :
بازگشت