• Title of article

    Study on the Raman scattering measurements of Mn ion implanted GaN

  • Author/Authors

    Zhang، نويسنده , , Y.H. and Guo، نويسنده , , L.L. and Shen، نويسنده , , W.Z.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    269
  • To page
    272
  • Abstract
    We investigate the temperature dependent Raman spectra of Mn implanted (Ga,Mn)N samples with five Mn implantation doses. A small shoulder at 572.4 cm−1 on the high energy side of the main Raman peak E 2 H has been attributed to the Mn-related local vibrational mode (LVM). It is found that with the increase of Mn implantation dose the intensity ratio of LVM to that of the E 2 H ( I LVM / I E 2 H ) increases at first and tends to saturate at high implantation dose. In addition, at high temperature or after rapid thermal anneal treatment, the value of I LVM / I E 2 H decreases significantly, explaining the reason why it is difficult to observe Mn-related LVM reported in the literature.
  • Keywords
    Raman spectra , Local vibrational mode , Diluted magnetic semiconductors
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2006
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2144182