Response of metal oxide thin film structures to radiation

The properties of the materials undergo changes by the influence of γ-rays. The degree of these changes could serve as a measure of the received radiation dose. Deep understanding of physical properties of the materials under the influence of radiation is vital for the effective design of devices for radiation-sensing applications. Mixing oxides in various proportions was found to control the radiation-sensing properties of the semiconductor films in terms of their sensitivity to γ-radiation exposure and working dose region.