Enhancing photoluminescence of nanocrystalline silicon thin film with oxygen plasma oxidation

The authors report the photoluminescence (PL) property of nanocrystalline silicon (nc-Si) enhanced by oxygen plasma oxidation technology. The oxidized nanocrystalline silicon thin films were investigated by PL, transmission electron microscope (TEM), micro-Raman scattering and X-ray diffraction (XRD). The photoluminescence property of nanocrystalline silicon increases with the size reduction of silicon crystallites after oxidation. The new method possesses advantages of low temperature and effective oxidation of nanocrystalline Si on glass or plastic substrate, thus make it more suitable for developing low cost array or flexible nc-Si optoelectronic devices.