Impurity interaction with point defects in the Si–SiO2 structures and its influence on the interface properties

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the SiO2 structure and Si–SiO2 interface properties. Hydrogen content in the oxidation ambient plays an important role in the density of point defects at the interface. The influence of point defects and impurities may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.