Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates

Micro-Raman spectroscopy is employed for the determination of stress in strained-Si grown on ultra-thin SiGe virtual substrates with a high degree of relaxation (70–100%) and with Ge content varied from 0.12 to 0.42. Stress, σ and strain, ɛ in the strained-Si layers are estimated from analysis of the spectral shifts of the Si phonon bands registered from both the strained-Si layer and the SiGe layer, taking into account the coherence conditions.