Synthesis of nanocrystalline GaN by the sol–gel method

Single-phase wurtzite GaN nanocrystals with an average diameter of 11 ± 3 nm were synthesized by the sol–gel technique from readily available Ga(NO3)3. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) confirmed they had a hexagonal structure and a narrow size distribution of the nanocrystals. X-ray powder diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurement showed that the GaN powder was of single-phase wurtzite structure with a considerable fraction of structural defects such as twin and stacking faults. The IR spectrum showed that only the Ga–N stretch is present at 600 cm−1. The EDX pattern of as-prepared product showed their ratio approximate to 1:1. Room temperature photoluminescence (PL) measurement exhibited the band-edge emission of GaN at about 390 nm and defect emission peak at 610 nm.