• Title of article

    Direct synthesis of SiC nanowires by multiple reaction VS growth

  • Author/Authors

    Du، نويسنده , , X.W. and Zhao، نويسنده , , X. and Jia، نويسنده , , S.L. and Lu، نويسنده , , Y.W. and Li، نويسنده , , J.J. and Zhao، نويسنده , , N.Q.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    6
  • From page
    72
  • To page
    77
  • Abstract
    β-SiC nanowires were directly synthesized by heating single-crystal silicon wafer and graphite without metal catalysts. The diameter of SiC nanowires is in the range of 10–30 nm, and the length is up to a few millimeters. Two kinds of SiC nanowires, namely pure SiC nanowires and SiC/SiO2 composite nanowires, formed at higher temperature (the holding stage) and lower temperature (the cooling stage), respectively. A multiple-reaction model was proposed to explain the formation of SiC nanowires.
  • Keywords
    SiC , nanowires , Synthesis
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2007
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2145201

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2145201