Title of article
Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency
Author/Authors
Lee، نويسنده , , Y.J. and Lu، نويسنده , , T.C. and Kuo، نويسنده , , H.C. and Wang، نويسنده , , S.C. and Hsu، نويسنده , , T.C. and Hsieh، نويسنده , , M.H. and Jou، نويسنده , , M.J. and Lee، نويسنده , , B.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
157
To page
160
Abstract
A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED.
Keywords
Nano-roughening , AlGaInP-based LEDs , Chemical wet etching
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2007
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145316
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