Synthesis and characterization of vanadium oxide films by post-oxidation and reactive sputtering

Vanadium oxide films were fabricated by two techniques—reactive deposition in oxygen-containing plasma and metal vanadium vacuum deposition with subsequent oxidation in air. It has been shown that the latter process allows formation of the films having reduced phase transition temperature ∼50 °С. The proposed capacitor design of sensitive element excludes electrical contacts to vanadium oxide, so the element is less crytical to degradation and current noise effects.