Title of article
Silicidation in Pd/Si thin film junction—Defect evolution and silicon surface segregation
Author/Authors
Abhaya، نويسنده , , S. and Amarendra، نويسنده , , G. and Venugopal Rao، نويسنده , , G. and Rajaraman، نويسنده , , Lav R. and Panigrahi، نويسنده , , B.K. and Sastry، نويسنده , , V.S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
7
From page
62
To page
68
Abstract
Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.
Keywords
Palladium silicides , X-ray diffraction , Auger electron spectroscopy , Positron annihilation spectroscopy , Rutherford backscattering spectrometry
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2007
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145457
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