Title of article :
Synthesis and optical property of high purity AlN nanowires
Author/Authors :
Lei، نويسنده , , M. and Yang، نويسنده , , H. and Guo، نويسنده , , Y.F and Song، نويسنده , , B. and Li، نويسنده , , P.G. and Tang، نويسنده , , W.H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
High quality AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperature. The structural property of the AlN nanowires was investigated in detail. It is found that these straight AlN nanowires have smooth surface with length around 20–60 μm. TEM observation confirms the nanowires are single-crystalline and grow along [11–20] direction. In addition, Raman scattering and photoluminescence spectra from AlN nanowires were studied.
Keywords :
nitrides , Semiconductors , Raman spectroscopy , Photoluminescence spectrum
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
