Author/Authors :
Shon، نويسنده , , Yoon and Jeon، نويسنده , , H.C. and Lee، نويسنده , , Sejoon and Park، نويسنده , , C.S. and Kim، نويسنده , , Eun Kyu and Fu، نويسنده , , D.J. and Fan، نويسنده , , X.J. and Yoon، نويسنده , , Chong S. and Lee، نويسنده , , Jeoung Ju Lee، نويسنده ,
Abstract :
The p-type InP:Zn was prepared by the liquid encapsulated Czochralski method and subsequently implanted with Mn+ of 5 × 1015 cm−2. The results of energy dispersive X-ray displayed that the concentration of incorporated Mn into InP:Zn is 1 at.%. The cross-sectional transmission electron microscopy showed that the thickness of Mn-incorporated layer was ∼300 nm. For photoluminescence measurements, the Mn-related optical transitions caused by incorporation of Mn were broadly observed at the energy region of 1.034, 0.985, and 0.958 eV. The samples clearly showed ferromagnetic hysteresis loops at 10 K, and the ferromagnetic behavior was observed to persist up to 360 K. Thus, the Curie temperature of Mn+-implanted InMnP:Zn (Mn ∼ 1 at.%) is expected to be above 300 K. It is found that a room-temperature-ferromagnetism of InMnP:Zn can be formed by ion implantation of a relatively low concentration of Mn (1 at.%).
