Title of article :
Investigations of porous InP properties by XRD, IR, USXES, XANES and PL techniques
Author/Authors :
Domashevskaya، نويسنده , , E.P. and Kashkarov، نويسنده , , V.M. and Seredin، نويسنده , , P.V. and Terekhov، نويسنده , , V.A. and Turishchev، نويسنده , , S.Yu. and Arsentyev، نويسنده , , I.N. and Ulin، نويسنده , , V.P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Abstract :
The work is concerned with complex investigations of the layers of porous indium phosphide (por-InP) using X-ray diffraction and IR-spectroscopy, ultrasoft X-ray emission spectroscopy (USXES), spectroscopy of X-ray near-edge absorption fine structure XANES (X-ray absorption near-edge structure) and photoluminescence, obtained by anodic pulse electrochemical etching of single-crystalline plates of InP(1 0 0) of n-type conductivity (n ∼ 1018). The data obtained as a result of this work demonstrated that the surface layers of por-InP have cluster structure with the formation of InP quasi-molecules.
Keywords :
surface structure , infrared spectroscopy , Indium phosphide , X-ray spectroscopy
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
