Author/Authors :
Leitمo، نويسنده , , J.P. and Santos، نويسنده , , N.M. and Sobolev، نويسنده , , N.A. and Correia، نويسنده , , M.R. and Stepina، نويسنده , , N.P. and Carmo، نويسنده , , M.C. and Magalhمes، نويسنده , , S. and Alves، نويسنده , , E. and Novikov، نويسنده , , A.V. and Shaleev، نويسنده , , M.V. and Lobanov، نويسنده , , D.N. and Krasilnik، نويسنده , , Z.F.، نويسنده ,
Abstract :
The influence of defects on the optical properties of a single Ge quantum well deposited on a Si substrate and on a diode structure containing a Si/Ge multilayer structure was investigated. In order to change the density of optically active defects, the as-grown samples were exposed to post-growth treatments: atomic hydrogen passivation and irradiation with 2.0 MeV protons to fluences in the range 2 × 1 0 12 to 1 × 1 0 14 cm−2. The optical and structural properties were investigated by photoluminescence and X-ray diffraction and reflection measurements. An unexpectedly high radiation hardness was observed for the as-grown Ge quantum wells.
