Author/Authors :
Tsubouchi، نويسنده , , K. and Ohkubo، نويسنده , , I. and Harada، نويسنده , , T. and Kumigashira، نويسنده , , H. and Matsumoto، نويسنده , , Y. and Ohnishi، نويسنده , , T. and Lippmaa، نويسنده , , M. and Koinuma، نويسنده , , H. and Oshima، نويسنده , , M.، نويسنده ,
Abstract :
We have developed a modified single-stage differentially pumped RHEED system for in situ monitoring of oxide epitaxial growth at high oxygen pressure. This modification enables us to operate the RHEED system up to oxygen pressure of 100 mTorr. RHEED intensity oscillations indicative of the layer-by-layer growth were clearly observed during LaNiO3 epitaxial growth at 30 mTorr of pure oxygen ambient. LaNiO3 epitaxial thin films showed both atomically flat surfaces and low resistivity, suggesting that the operative oxygen pressure was high enough to epitaxially grow oxide films under optimum conditions.
