Thermal annealing effects on Cu–Se resonant tunneling diodes fabricated by electrodeposition-assisted template synthesis technique

In this paper, we present the influence of thermal annealing on the I–V characteristics of Cu–Se resonant tunneling diodes of 100 nm diameter fabricated through template-based synthesis technique. Our experimental results indicate that high-temperature annealing can result in improvement of the electrical characteristics of Cu–Se resonant tunneling diodes. It is evidenced from an increase in peak to valley current ratio, which is 1.13 at room temperature of 300 K and is 5.05 at annealing temperature of 363 K. We present these results from I–V studies of these devices recorded at different annealing temperatures (323–363 K).