Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition

TiO2 thin films were deposited on ITO (indium–tin-oxide)-buffered glass by pulsed laser deposition. Bipolar resistive switching behaviors of Ag/microcrystalline TiO2/ITO stacked structures were systematically investigated. Dependence of switching voltage and band gap energy on deposition temperature were also analyzed. Results indicate that the reset voltages and band gap energy (Eg) vary from −0.9 V to −6.8 V and 3.26 eV to 3.18 eV respectively, while the TiO2 films were formed from 300 °C to 600 °C. These bipolar switching phenomena have been also discussed based on the Schottky barrier at the Ag/TiO2 interface structure.