Title of article :
Co-precipitation of copper and nickel in crystalline silicon
Author/Authors :
Rudolf، نويسنده , , C. and Saring، نويسنده , , P. and Stolze، نويسنده , , L. and Seibt، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
4
From page :
365
To page :
368
Abstract :
Co-precipitation of copper and nickel in silicon bicrystals produced by wafer-bonding has been investigated. Transmission electron microscopy and energy-dispersive X-ray analysis show two types of precipitates: copper-rich silicide particles that contain a small partial mole fraction of 5% of nickel and nickel-rich particles containing a partial mole fraction between 15% and 25% of copper. Both types of precipitates are found inside large precipitate colonies typical for copper precipitation in silicon in the absence of nickel co-doping. Thermodynamically these precipitates can be assigned to the known binary metal silicide phases Cu3Si and NiSi2 and a solid solution of a second metal species therein.
Keywords :
Silicon , Transmission electron microscopy , Metal silicide precipitates , Metal impurities , Ternary phase diagram
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2009
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2146564
Link To Document :
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