Title of article
Mobility laws in dislocation dynamics simulations
Author/Authors
Cai، نويسنده , , Wei and Bulatov، نويسنده , , Vasily V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
277
To page
281
Abstract
Prediction of the plastic deformation behavior of single crystals based on the collective dynamics of dislocations has been a challenge for computational materials science for a number of years. The difficulty lies in the inability of existing dislocation dynamics (DD) codes to handle a sufficiently large number of dislocation lines, to establish a statistically representative model of crystal plasticity. A new massively parallel DD code is developed that is capable of modeling million-dislocation systems by employing thousands of processors. We discuss an important ingredient of this code — the mobility laws dictating the behavior of individual dislocations. They are materials input for DD simulations and are constructed based on the understanding of dislocation motion at the atomistic level.
Keywords
Crystal plasticity , dislocation dynamics , Mobility
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
2004
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2146894
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