Author/Authors :
Huang، نويسنده , , H.W. and Lin، نويسنده , , C.H and Huang، نويسنده , , J.K. and Lee، نويسنده , , K.Y. and Lin، نويسنده , , C.F. and Yu، نويسنده , , C.C. and Tsai، نويسنده , , J.Y. and Hsueh، نويسنده , , R. and Kuo، نويسنده , , H.C. and Wang، نويسنده , , S.C.، نويسنده ,
Abstract :
In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20 mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.
Keywords :
GaN , Light emitting diodes (LEDs) , Nano-hole patterned sapphire substrate (NHPSS) , Nano-imprint lithography (NIL)
