Title of article
InAs/GaAs quantum dots morphology: Nanometric scale HAADF simulations
Author/Authors
Araْjo، نويسنده , , D. and El Bouayadi، نويسنده , , R. and Gutiérrez، نويسنده , , M. and Pastore، نويسنده , , C.E. and Hopkinson، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
6
From page
88
To page
93
Abstract
A quantitative methodology of In distribution in nominal InAs/GaAs individual quantum dot (QD) is presented. Numerical simulations, using multislice-based approach, allow predicting high angle annular dark field (HAADF or Z-contrast) micrograph contrasts working in scanning transmission electron microscopy (STEM) mode. Even the method is adapted for nanometric scale; it is shown that its high sensitivity can reveal In-segregation in QD. The here observed samples show In diffusion below the wetting layer giving an elliptical-like shape of the observed QD.
Keywords
Quantum dot , HDAAF , Electron microscopy , Indium arsenide , Gallium arsenide , Semiconductor devices
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2009
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2147075
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