Author/Authors :
Rubén Rimada، نويسنده , , J.C. and Prezioso، نويسنده , , M. T. Nasi، نويسنده , , L. and Gombia، نويسنده , , E. and Mosca، نويسنده , , R. and Trevisi، نويسنده , , G. and Seravalli، نويسنده , , L. and Frigeri، نويسنده , , P. and Bocchi، نويسنده , , C. G. FRANCHI، نويسنده , , S.، نويسنده ,
Abstract :
In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In0.15Ga0.85As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening in the InAs/GaAs system. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance–voltage (C–V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.
Keywords :
Indium arsenide , Transmission electron microscopy , Molecular Beam Epitaxy , Quantum dots , electrical measurements
