Title of article :
Analysis of donor–acceptor pairs and titanium related luminescence in different compensated 6H–SiC single crystals
Author/Authors :
Huang، نويسنده , , Wei and Chen، نويسنده , , Zhi-zhan and Chang، نويسنده , , Shao-hui and Li، نويسنده , , Zheng-zheng and Shi، نويسنده , , Er-wei، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
4
From page :
139
To page :
142
Abstract :
The photoluminescence of three kinds of compensated 6H–SiC single crystals, the vanadium heavily compensated, vanadium slightly compensated, and non-vanadium compensated, has been investigated. Nitrogen (N), aluminum (Al), vanadium (V), and titanium (Ti) are the main impurities. For the vanadium heavily compensated and non-vanadium compensated semi-insulating 6H–SiC, photoluminescence of the donor–acceptor pairs (DAPs) are inconspicuous because of the rare shallow centers. For vanadium slightly compensated 6H–SiC, DAPs and Ti-related emissions are obvious. As an effective luminescence center, the Ti-related recombinations cover a broad range from 1.70 eV to 2.86 eV.
Keywords :
doping effects , silicon carbide , Optical properties
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2010
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2147656
Link To Document :
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