Title of article
Efficiency of commercial Cz-Si solar cell with a shallow emitter
Author/Authors
Vلzquez، نويسنده , , C. and Alonso، نويسنده , , J. and Vلzquez، نويسنده , , M.A. and Caballero، نويسنده , , L.J. and Romero، نويسنده , , R. and Ramos Barrado، نويسنده , , J.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
7
From page
43
To page
49
Abstract
The increase of a commercial solar cell performance implies an improvement in the different processes in the industrial production. In order to know the main limitations in the efficiency of Czocharalski-Si (Cz-Si) photovoltaic cells, the loss distribution was studied by means of external quantum efficiency, I–V measurements and PC-1D simulation in the current device. One of the most relevant losses is due to recombination in the emitter. The emitters with a low resistance (40 Ω/□) and a deep pn-junction, display a considerable loss ratio. Shallower emitters (80 Ω/□) with low doping density and a new paste for the front side result in a relative improvement in cell efficiency of 3.5%.
Keywords
Shallow emitter , Spectral Analysis , CZ-silicon , Photovoltaic cell fabrication
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2010
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2147747
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