Title of article
Long time stability of ITO/NiPc/ZnO/Al devices with ZnO buffer layer formed by atomic layer deposition technique–impedance spectroscopy analysis
Author/Authors
Stakhira، نويسنده , , Pavlo Y. and Grygorchak، نويسنده , , Ivan I. and Cherpak، نويسنده , , Vladyslav V. and Ivastchyshyn، نويسنده , , Fedir O. and Volynyuk، نويسنده , , Dmytro Y. and Luka، نويسنده , , Grzegorz and Godlewski، نويسنده , , Marek and Guziewicz، نويسنده , , Elzbieta and Pakhomov، نويسنده , , Georgi L. and Hotra، نويسنده , , Zenon Y.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
272
To page
275
Abstract
We report on stable in time organic photovoltaic devices based on metal-phthalocyanine structures, which were formed by vacuum deposition of nickel phthalocyanine (NiPc). The reported stability is due to ultra-thin zinc oxide (ZnO) layer formed at low temperature on top of the structure (beneath the metal contact) by atomic layer deposition (ALD) technique. We performed comparative analysis of current density–voltage characteristics and frequency dependencies of the impedance for freshly made ITO/NiPc/ZnO/Al and ITO/NiPc/Al devices and after storage during one month in air. We conclude that introducing of ultra-thin ZnO film into under-cathode region of ITO/NiPc/Al structure provides long-term protection of NiPc films from atmospheric effects.
Keywords
Zinc oxide , Nickel phthalocyanine , atomic layer deposition , Impedance spectroscopy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2010
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2147831
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