Growth of MgxZn1−xO film by MOCVD equipped laser heating system

MgxZn1−xO film was epitaxially grown on an a-sapphire substrate by employing repeated temperature modulation (RTM) in a metal–organic chemical vapor deposition (MOCVD) reactor equipped with laser heating system. By using H2 as the carrier gas, bis-cyclopentadienyl magnesium (Cp2Mg) and diethyl zinc (DEZn) were introduced into the reactor under a constant flow of N2O gas. It was observed that the epitaxial growth of these MgxZn1−xO films was sensitive to the deposition temperature. Epitaxially grown MgxZn1−xO films were obtained in the deposition temperature range of 485–525 °C, and their Mg content was found to change from 0.15 to 0.33. X-ray photoelectron spectroscopy (XPS) measurements revealed that MgO domains were present both on the surface and inside of the Mg0.33Zn0.67O films. However, in the case of the Mgo.15Zn0.85O film, MgO domains were present on the film surface but not inside the film.