Characterization and ferroelectricity of Bi and Fe co-doped PZT films

Co-doping of thin Pb(Zr,Ti)O3 (PZT) films with Bi and Fe to optimize the ferroelectric properties has recently gained attention particularly, for ferroelectric random access memory applications (FeRAM). This study was undertaken to understand how co-doping PZT with one atomic% Bi and Fe impacts the characteristics of capacitor ferroelectric and material properties. XRD patterns of PZT-BiFeO3 (BF) and PZT 150 nm thick showed strong (1 1 1) orientation and changing the sample stage angle Chi to 50° revealed multiple PZT and PZT-BF diffractions peaks. Bi and Fe co-doping of PZT results in a 0.01 إ decrease in lattice dimensions which indicates that Bi and Fe are substituting into the PZT lattice. Polarization hysteresis loops show similar characteristics but pulse measured polarization values were higher for PZT-BF than PZT which indicates PZT-BF has potential for thin film ferroelectric devices.