Title of article :
Electronic structure analysis of Sb-doped BaSnO3
Author/Authors :
Yamashita، نويسنده , , Daisuke and Takefuji، نويسنده , , Satoru and Tsubomoto، نويسنده , , Masato and Yamamoto، نويسنده , , Tomoyuki، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.
Keywords :
Electronic structure , BaSnO3 , Antimony , Photoemission yield spectroscopy , First-principles calculation , transparent conducting oxide
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B