Title of article
Electro-shape-memory effect in Mn-doped (Pb, Sr)TiO3 ceramics
Author/Authors
Yang، نويسنده , , Liu and Liu، نويسنده , , Wenfeng and Chen، نويسنده , , Wei and Wang، نويسنده , , Yu and Cao، نويسنده , , Xiaolong and Ren، نويسنده , , Xiaobing، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
176
To page
180
Abstract
Electric-field-induced strain behavior of 0.5 mol% Mn-doped (Pb0.4, Sr0.6)TiO3 ceramics was studied in this paper. Through utilizing a new mechanism, which is point-defect-mediated domain switching, a double hysteresis and relatively large recoverable strain of 0.1% at 3000 V/mm were obtained from the samples after aging at room temperature. This behavior can be considered as a new kind of shape memory effect due to the reversibility and the ‘digital-like’ jump in electrostrain, which is controlled by electric field. The present result suggests that utilizing domain-switching can be a new way to improve the performance of the electrostrain effect of Pb-based ceramics.
Keywords
Electrostrain , (Pb , Point-defect symmetry , Ferroelectrics , Electro-shape-memory , Sr)TiO3
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
2006
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2148040
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