Author/Authors :
M. and Morales-Sلnchez، نويسنده , , Severino A. and Barreto، نويسنده , , J. and Domيnguez، نويسنده , , C. Monroy Aceves، نويسنده , , Ingrid M. and Leyva-Cobi?n، نويسنده , , K.M. and Luna-Lَpez، نويسنده , , J.A. and Carrillo، نويسنده , , and J. L. Pedraza، نويسنده , , J.، نويسنده ,
Abstract :
Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.
Keywords :
silicon rich oxide , silicon nanoparticles , Metal-oxide semiconductor , Conductive paths , electroluminescence
