Visible electroluminescence on FTO/thin SRO/n-Si structures

Photoluminescence (PL) and electroluminescence (EL) of silicon rich oxide (SRO) films deposited by low pressure chemical vapour deposition (LPCVD) have been researched. SRO films emit an intense PL band between 550 and 850 nm. EL was studied using fluorine-doped tin oxide (FTO)/thin SRO/n-Si structures. Intense and stable electroluminescence was observed under reverse bias. EL is observed between 400 and 900 nm with two main peaks around 450 and 600 nm. EL was related to charge injection through conductive paths and radiative recombination between traps or defect levels.