Title of article
Visible electroluminescence on FTO/thin SRO/n-Si structures
Author/Authors
Leyva، نويسنده , , K.M. and Aceves-Mijares، نويسنده , , M. and Yu، نويسنده , , Z. and Flores، نويسنده , , F. and Morales-Sلnchez، نويسنده , , A. and Alcلntara، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
141
To page
144
Abstract
Photoluminescence (PL) and electroluminescence (EL) of silicon rich oxide (SRO) films deposited by low pressure chemical vapour deposition (LPCVD) have been researched. SRO films emit an intense PL band between 550 and 850 nm. EL was studied using fluorine-doped tin oxide (FTO)/thin SRO/n-Si structures. Intense and stable electroluminescence was observed under reverse bias. EL is observed between 400 and 900 nm with two main peaks around 450 and 600 nm. EL was related to charge injection through conductive paths and radiative recombination between traps or defect levels.
Keywords
silicon rich oxide , LPCVD , FTO , electroluminescence
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2010
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2148154
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