• Title of article

    Shape memory behavior of Ti–Ni–Cu thin films

  • Author/Authors

    Ishida، نويسنده , , A. and Sato، نويسنده , , M. and Ogawa، نويسنده , , K. and Yamada، نويسنده , , K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    683
  • To page
    686
  • Abstract
    Three kinds of Ti-rich Ti–Ni–Cu thin films (Ti51.9Ni41.6Cu6.5, Ti51.6Ni36.8Cu11.6, Ti51.5Ni33.1Cu15.4) and three kinds of (Ni, Cu)-rich Ti–Ni–Cu thin films (Ti48.9Ni44.9Cu6.2, Ti48.5Ni40.0Cu11.5, Ti48.6Ni35.9Cu15.5), numbers indicate at.%, were prepared by sputtering and annealed at 773, 873 and 973 K for 1 h. X-ray diffraction patterns showed that the Ti-rich thin films contain Ti2Ni and Ti2Cu phases, while the (Ni, Cu)-rich thin films contain a TiNiCu phase. The B2 → B19′ martensitic transformation occurred below 10 at.% Cu, while the B2 → B19 martensitic transformation occurred above 10 at.% Cu. The transformation temperature increased with increasing Cu content and annealing temperature. The temperature hystereses were small compared with those of Ti–Ni binary alloy thin films. The maximum recoverable strain decreases with increasing annealing temperature. It also decreases with increasing Cu content when the Cu content is more than 10 at.%. The critical stress for inducing plastic deformation increases with decreasing annealing temperature and increasing Cu content.
  • Keywords
    Ti–Ni–Cu , Thin film , sputtering , MEMS , sputtering , shape memory
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Serial Year
    2006
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Record number

    2148173