Title of article
Band structure calculations of Cu(In1−xGax)Se2
Author/Authors
Chandramohan، نويسنده , , M. and S.Velumani and Venkatachalam، نويسنده , , T.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
5
From page
200
To page
204
Abstract
First principles density calculations of the band structure, and density of states of the Cu(In1−xGax)Se2 in the chalcopyrite type structure have been carried out using the density functional theory. The relationship between the band gap and chemical composition in the structure is discussed. The effective masses of the electrons and holes in the different composition crystals are reported.
Keywords
CIGS , Density of states , Band structure of semiconductors , Effective masses
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2010
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2148185
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