Title of article :
Band structure calculations of Cu(In1−xGax)Se2
Author/Authors :
Chandramohan، نويسنده , , M. and S.Velumani and Venkatachalam، نويسنده , , T.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
First principles density calculations of the band structure, and density of states of the Cu(In1−xGax)Se2 in the chalcopyrite type structure have been carried out using the density functional theory. The relationship between the band gap and chemical composition in the structure is discussed. The effective masses of the electrons and holes in the different composition crystals are reported.
Keywords :
CIGS , Density of states , Band structure of semiconductors , Effective masses
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B