Title of article
Photoluminescence inhomogeneity and InAs QD laser structure parameters
Author/Authors
Casas Espinola، نويسنده , , J.L. and Polupan، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
3
From page
266
To page
268
Abstract
The photoluminescence (PL) and its power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In0.15Ga0.85As/GaAs quantum wells (QWs) with different PL intensities and different shapes of PL spectra. It was shown that two reasons are responsible for the PL intensity inhomogeneity and different shapes of PL spectra in the studied structure. The first reason deals with the variation of QD concentrations and the second one related to the bimodal QD size distribution in DWELL. At the same time both types of QD ensembles are characterized by high QD quality.
Keywords
Dot-in-a-well structures , Photoluminescence , Excitation power dependences
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2010
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2148216
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