Title of article :
Insights into the local electronic structure of semiconducting boron carbides in the vicinity of transition metal dopants
Author/Authors :
Luo، نويسنده , , Guangfu and Lu، نويسنده , , Jing and Liu، نويسنده , , Shan-Jing and Mei، نويسنده , , Wai-Ning and Dowben، نويسنده , , P.A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
8
From page :
1
To page :
8
Abstract :
Based on the experimentally determined pairwise site locations of transition metal atoms in doped semiconducting boron carbides, model spin-polarized electronic structure calculations indicate that some transition metal doped semiconducting boron carbides may act as excellent spin filters when used as the dielectric barrier in a magnetic tunnel junction structure. The local spin configuration of all the 3d transition metals, Ti to Cu, doped boron carbides are compared using first-principle total energy calculations on cluster and infinite icosahedral chain models. In the case of Ti and Fe doping, there may be considerable enhancements in the magneto-resistance of the heterostructure. The models also confirm that the favorable sites 3d transition metal atoms occupied are within the icosahedral cage, in a pairwise fashion on adjacent icosahedra.
Keywords :
Semiconducting boron carbides , Band gaps , Local magnetic order in a semiconductor matrix , Transition metal doping , Spin tunnel junctions
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2010
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2148230
Link To Document :
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